specifications of any and all sanyo semiconductor co.,l td. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' sproductsor equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equ ipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medica l equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, t ransportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of re liability and can directly threaten human lives in case of failure or malfunction of the product or may cause har m to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for app lications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is n o consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 41107 ti pc b8-8730 no.8318-1/8 LB11660FV overview the LB11660FV is a single-phase bipolar dr ive half-predriver motor dr iver that can easily implem ent a direct pwm driver motor driver circuit with excellent effi ciency. the LB11660FV is particularly well suited for the miniature fans used in servers. features ? single-phase full-wave drive (15v, 1.5a transistors are built in) half predriver with integrated high side transistor ? built-in variable speed function controlled by an external input the LB11660FV can implement quiet, low-vibration variable speed control using externally clocked high side transistor direct pwm drive. ? minimum speed setting pin ? current limiter circuit (the limit value is determined by rf; i o = 1a when rf = 0.5 ) ? built-in kickback absorption circuit ? soft switching circuit makes low current consumption, lo w loss, and low noise drive possible at phase switching ? built-in hb ? built-in lock protection and automatic reco very circuits (built-in on/off ratio sw itching circuit controlled by the supply voltage) ? fg (speed detection) output ? built-in thermal protection circuit (design guarantee) monolithic digital ic single-phase full-wave fan motor driver orderin g numbe r : en8318
LB11660FV no.8318-2/8 specifications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit v cc maximum supply voltage v cc max 20 v vm maximum supply voltage vm max 20 v out pin maximum output current i out max rf 0.39 1.5 a out pin output voltage 1 v out max 1 20 v out pin output voltage 2 v out max 2 t 0.4 s 26.5 v pre pin maximum source current ipso max 30 ma pre pin maximum sink current ipsi max -7 ma pre pin output voltage vp max 20 v hb maximum output current hb max 10 ma vth input pin voltage vth max 7 v fg output pin voltage vfg max 18 v fg output current ifg max 10 ma allowable power dissipation pd max when mounted on a circuit board *1 0.8 w operating temperature topr *2 -30 to +90 c storage temperature tstg -55 to +150 c *1 specified circuit board : 114.3 76.1 1.6mm 3 , glass epoxy. *2: tj max is 150c. this device must be used under conditions su ch that the chip temperature does not exceed tj = 150c during operation. recommended operating conditions at ta = 25 c parameter symbol conditions ratings unit v cc supply voltage v cc 4 to 15 v v m supply voltage vm 3 to 15 v current limiter operation range ilim 0.6 to 1.2 v vth input level voltage range vth 0 to 6 v hall sensor input common-mode input voltage range vicm 0.2 to 3 v electrical characteristics unless otherwise specified ta = 25 c, v cc = 12v ratings parameter symbol conditions min typ max unit circuit current i cc 1 drive mode 9 12 ma hb voltage vhb ihb = 5ma 1.05 1.25 1.40 v 6vreg voltage v6vreg 6vreg = 5ma 5.80 6 6.20 v ct pin high-level voltage vcth 3.4 3.6 3.8 v ct pin low-level voltage vctl 1.4 1.6 1.8 v ict pin charge current 1 ictc1 v cc = 12v 1.7 2.2 2.7 a ict pin charge current 2 ictc2 v cc = 6v 1.3 1.8 2.3 a ict pin discharge current 1 ictd1 v cc = 12v 0.11 0.15 0.19 a ict pin discharge current 2 ictd2 v cc = 6v 0.34 0.44 0.54 a ict charge/discharge current ratio 1 rct1 v cc = 12v 12 15 18 times ict charge/discharge current ratio 2 rct2 v cc = 6v 3 4 5 times ict charge/discharge ratio threshold voltage vrct 6 6.6 7.3 v vth bias current ibvth -2 -1 0 a out output high saturation voltage v oh i o = 200ma, rl = 1 0.6 0.8 v continued on next page.
LB11660FV no.8318-3/8 continued from preceding page. ratings parameter symbol conditions min typ max unit pre output low saturation voltage v pl i o = 5ma 0.2 0.4 v pre output high saturation voltage v ph i o = -20ma 0.9 1.2 v current limiter vrf v cc - vm 450 500 550 mv pwm output pin high-level voltage vpwmh 2.2 2.5 2.8 v pwm output pin low-level voltage vpwml 0.4 0.5 0.7 v pwm external c charge current ipwm1 -23 -18 -14 a pwm external c discharge current ipwm2 18 24 30 a pwm oscillator frequency fpwm c = 200pf 19 23 27 khz hall sensor input sensitivity vhn zero peak value (including offset and hysteresis) 15 25 mv fg output pin low-level voltage vfg/rd ifg/rd = 5ma 0.2 0.3 v fg output pin leakage current ifgl/irdl vfg/rd = 7v 30 a thermal protection circuit thd design target value*3 150 180 210 c *3: this is a design guarantee and is not tested in individual units. the thermal protection circuit is included to prevent any thermal damage to the ic. since this would imply operation outside the ic's guaranteed temperature range, the application thermal design must be such that the therm al protection circuit will not operate if the fan is operating constantly. package dimensions pin assignment unit : mm (typ) 3178b truth table in- in+ vth cpwm ct out1 out2 pre1 pre2 fg mode high low high off low high low low high low high off high high low off during rotation ? drive high low off off low high low low high high low low off off high low off during rotation ? regeneration high low off off low high low low high - - high off off high low off lock protection cpwm ? high is the state where cpwm > vth, and cpwm? low is the state where cpwm < vth. 5.2 4.4 6.4 0.22 0.65 (0.33) 18 9 16 0.5 0.15 1.5max 0.1 (1.3) sanyo : ssop16(225mil) top view out2 1 2 3 4 11 15 8 5 10 9 7 12 6 13 14 16 v cc vth vm rmi cpwm fg in+ hb in - ct 6vreg gnd out1 pre2 pre1 LB11660FV
LB11660FV no.8318-4/8 application circuit example 1 *1. power supply and ground lines the ic ground is the control current power supply system ground, and the external n-channel transistor ground is the motor powe r supply system ground. these two systems should be formed from sepa rate lines and the control system extern al components should be connected to the ic ground. *2. regeneration power supply stabilization capacitor use a 4.7f/25v capacitor at least for cm, which is the power supply stabilization capacitor for both pwm drive and kickback absorption. the capacitor cm must be connected to prevent destru ction of the ic when power is applied or removed. *3. speed control (1) control voltage the pwm duty is determined by comparing the vth pin voltage with the pwm oscillator waveform. when the vth voltage falls, the on duty increases and when the vth voltage falls below the pwm output low level, the duty will go to 100%. (2) thermistor for thermistor applications, normally the 6vreg level will be resistor divided and the divided level input to the vth pin. the pwm duty is changed by changes in the vth pin voltage due to changes in temperature. *4. current limiter setting the current limiter circuit operates if the voltage across the resistor between v cc and the vm pin exceeds 0.5v. since the current limiter circuit applies limitation at a current determined by i o = vrf/rf (where vrf = 0.5v (typical), rf: resistance of the current detection resistor), the current limiter will operate at i o = 1a when rf = 0.5 . the resistor rf must be connected in the circuit and it must have a value such that the circuit operates within the recommended current limiter operating range. v cc fg out1 out2 ct = 0.47 to 1 f ct vth in+ in - cpwm * 5 cp = 200pf *f = 23khz cp = 100pf *f = 46khz * 1 * 7 h * 2 hb gnd * 6 6vreg vm rf * 4 control valtage rmi r3 pre1 pre2 * 3 * 9 cm = 4.7 for more r4
LB11660FV no.8318-5/8 *5. hall sensor input lines that are as short as possible must be used to prevent noise from entering the system. th e hall sensor input circuit cons ists of a comparator with hysteresis (20mv). we recommend that the hall se nsor input level be at least th ree times this hysteresis, i.e . at least 60mvp-p. *6. pwm oscillator frequency setting capacitor the pwm oscillator osc illates at f = 23khz when cp is 200pf and at f = 46kh z when cp is 100pf, and this frequency becomes the pwm reference frequency. note that the pwm frequency is given a pproximately by the following equation. f [khz] (4.610 6 ) c [pf] *7. fg output this is an open collector output, and a rotation count detection function can be implemente d using this fg output, which corresponds to the phase switching. this pin must be left open if unused. *8. hb pin this pin provides a hall effect sensor bias constant-voltage output of 1.25v. *9. rmi pin this pin is the speed control minimum speed setting. the minimum output duty is set by r3 and r4. leave r4 open to have the motor stop when the duty is 0%. rotation control timing chart minimum output duty vth(v) pwm duty(%) duty 100% duty 0% vpwml vpwmh rmi cpwm 2.5v 0.5v pwm control variable speed mode full speed mode 0v on duty minimum speed settin g rotation rmi volta g e vth volta g e on off
LB11660FV no.8318-6/8 application circuit example 2 sanyo mounting circuit board (component valu es are provided for reference purposes) parts list d1 : sbm30-03-tr (sanyo) q1, 2 : cph3418 (sanyo) r1 : 0.51 size 3225 r2 : 15k size 1608 r3 : 39k size 1608 r4 : 20k size 1608 r5 : 2.2 size 1608 c1 : 4.7 f/25v size 3216 c2 : 2.2 f size 1608 c3 : 2.2 f size 1608 c4 : 220pf size 1005 c5 : 0.47 f size 1608 c6, 7 : no connection v cc fg out1 out2 ct vth in+ in- cpwm h hb gnd 6vreg vm control voltage rmi r3 r4 pre1 pre2 r1 c1 c2 r2 c3 (c6) (c7) c5 c4 q1 q2 r5 d1
LB11660FV no.8318-7/8 application circuit example 3 no minimum speed setting, thermistor input used v cc fg out1 out2 ct = 0.47 to 1 f ct vth in+ in- cpwm *5 h hb gnd *8 6vreg vm rl rmi r3 th rtu pre1 pre2 cm=4.7 f or more cp = 200pf *f = 23khz cp = 100pf *f = 43khz
LB11660FV ps no.8318-8/8 sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rate d values (such as maximum ra tings, operating condition ranges, or other parameters) listed in products specif ications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qual ity high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to acci dents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or e vents cannot occur. such measures include but are not limited to protective circuits and error prevention c ircuits for safe design, redundant design, and structural design. upon using the technical information or products descri bed herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable f or any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagr ams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equi pment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor c o.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities conc erned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any in formation storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. internal equivalent circuit diagram a mplifier with hysteresis cpwm m control circuit hall in- in+ v cc out1 fg out2 delay circuit delay circuit vth gnd 6vreg thermal protection circuit oscillator circuit charge/discharge circuit 1.25v hb rmi ct vm predriver predriver pre2 pre1 constant voltage this catalog provides information as of april, 2007. specifications and information herein are subject to change without notice.
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